Shanthi Iyer

SHANTHI N. IYER
PROFESSOR

Department of Electrical Engineering
North Carolina A&T State University
Greensboro, NC 27411

Phone : (336) 334-7761 x220
Email: iyer@genesis.ncat .edu

Dr. Iyer received her B.S. (1974) and M.Sc. in Physics ( 1976) from Delhi University and her Ph.D. also in Physics from I.I.T., Delhi, India (1983). She joined North Carolina A&T State University as a faculty in 1981. She has also worked as a summer visitor employee at AT&T Bell Laboratories (1988 &1989) and Wright Patterson Laboratories (1991).

She is an active member of professional societies Materials Research Society, IEEE (senior member), American Physical Society, Sigma Xi, and The Minerals, Metals & Materials Society. She is a recepient of Excellence in Research Award in College of Engineering, NCA&TSU (1993).

Her current research interests are in the MBE growth, characterization and device applications of narrow band gap III-V compound semiconductors.

Publications

S. Iyer, S. Mulugeta, W. Collis, S. Venkatraman, K. K. Bajaj and G. Coli, "Photoreflectance Studies of Te-Doped GaSb at the E0+D0 Transition", J. Appl. Phys. March 2000.
S. Iyer, Jie Li, Shanaz Chowdhury-Nagle, and K.K Bajaj, "InAsSb/InTlSb Superlattice-A Proposed Heterostructure for Long Wavelength Infrared Detectors",J. Electron. Mater. 26,347 (1997).
S. Iyer, R. Parakkat, B. Mangalam, B. Patnaik,M. Falvo, and N. Parikh, " A Study of the Ion Implantation Damage and Annealing Behavior in GaSb", J. Electron. Mater. 25, 119-124 (1996).
S. Iyer, Lori Small, S. Hegde, K.Bajaj, and Ali Abul-Fadl "Low Temperature Photoluminescence of LPEE Grown Te-Doped GaSb" J. Appl. Phys., 77, 5902-09 (1995).
S. Iyer, S. Hegde, K.K. Bajaj, A. Abul?Fadl, and W.Mitchel, "Photoluminescence Study of LPEE Grown GaInAsSb Epilayers on GaSb" J. Appl. Phys. 73, 3948-3951 (1993).
S. Iyer, S. Hegde, A. Abul?Fadl, K.K. Bajaj and W. Mitchel, " Growth and Photoluminescence Study of GaSb and Ga1-xInxAsySb1-y Grown on GaSb Substrates by Liquid- Phase Electroepitaxy" Phys. Rev.B 47,1329-39 (1993).
A. Abul-Fadl, W. Collis, S. Maanaki, T. McCarty and S. Iyer, "Selective Etchback and Growth of InGaAs on (100) Fe:InP by Electroepitaxy", J. Electron. Mater., 19, 111?6 (1990).
S. Iyer, A.T. Macrander, R.F. Karlicek, Jr. and S. Lau, "Semi?Insulating Properties of Fe?Doped InP Grown by Hydride VPE", J. Appl. Phys., 66, 5880?4 (1989).
S. Iyer, A. Abul?Fadl, W.J. Collis and M.N. Khorrami, "Properties of Undoped and Mn?Doped InGaAsP Grown by LPEE", Thin Solid Films 163, 427?435 (1988)
Shanthi Iyer, E.K. Stefanakos, A. Abul?Fadl and W.J. Collis "CCLPE Growth and Characterization of InGaAsP", J. Crystal Growth 70, 162?8 (1985).
Shanthi Iyer, E.K. Stefanakos, A. Abul?Fadl and W.J. Collis "Diffusion Coefficient and Differential Mobility of As in for LPE and Current Controlled LPE", J. Crystal Growth 67, 337?42 (1984).
E. Shanthi, A. Banerjee and K.L. Chopra, "Dopants Effects in Sprayed Tin Oxide Films", Thin Solid Films 88, 93?100 (1982).
E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Electrical and Optical Properties of Tin Oxide Films Doped with F and (Sb+F)", J. Appl. Phys. 53, 1615?21 (1982).
E. Shanthi, V. Dutta, A. Banerjee and K.L. Chopra, "Electrical and Optical Properties of Undoped and Antimony ? Doped Tin Oxide Films", J. Appl. Phys. 51, 6243?51 (1980).
E. Shanthi, A. Banerjee, V. Dutta and K.L. Chopra, "Annealing Characteristics of Tin Oxide Films Prepared by Spray Pyrolysis", Thin Solid Films 71, 237?44 (1980).

Refereed Proceedings

J. Li, T. Rawdanowicz, S. Iyer, S. Venkatraman and W.J. Collis, "Molecular Beam Epitaxial Growth and Doping of InSb using SnTe Source" Proc. of TMS Editor Ben Q Li, p277 1998
J. Li, S. Iyer, S. Venkatraman, "Rheed Study of Oxide Desorption of InSb", Presented at the MRS Fall Meeting, Boston, MA (Dec.1, 1997), Mat. Res. Soc. Symp. Proc.484 (1997).
S. Iyer, S. Mulugeta, J. Li, B. Mangalam, and S. Venkatraman, " Photoreflectance Study of MBE
Grown Te-doped GaSb at the E0+D0 Transition", Presented at the MRS Fall Meeting, Boston, MA (Dec.2, 1997), Mat. Res. Soc. Symp. Proc.484, 57-62 (1997).
S. Iyer, K.K. Bajaj, Shahnaz Chowdhury-Nagle and Jie Li, " Theoretical Study of InTlSb/InAsSb Superlattice for Far Infared Detector", ", Presented at the MRS Spring Meeting, San Francisco (April 8, 1996), Mat. Res. Soc. Symp. Proc. 421, 395(1996).
S. Iyer, R. Parakkat, B. Patnaik, N. Parikh and S. Hegde, "Ion implantation damage and annealing in GaSb", Mat. Res. Soc. Symp. Proc., 316, 185-190 (1994)
Shanthi N.Iyer, S.Hegde, K.K.Bajaj, A.Abul-Fadl, and W.Mitchel, " Low Temperature PL Characterization of LPEE Grown GaSb and GaInAsSb Epilayers on GaSb" Mat. Res. Symp. Proc. vol. 299, 41-45 (1993).
S. Iyer, A. Abul?Fadl, A. Macrander, J. Lewis, W. Collis and J. Sulhoff,"Liquid Phase Electroepitaxial (LPEE) Growth of GaSb and GaInAsSb"; Presented at the MRS Fall Meeting, Boston, MA (Nov 30, 1989), Mat. Res. Soc. Symp. Proc., Vol.160, 445-449 (1990).
S. Iyer, A. Abul?Fadl, W.J. Collis and M.N. Khorrami, "Characterization of Mn?Doped InxGa1?xAsyP1?y Grown by LPEE""; Presented at the MRS Fall Meeting, Boston, MA, Dec.1, 1987, Proc. of Materials Research Symposium on Epitaxy of Semiconductor Layered Structures, Vol. 102, 201?7 (1987).
A. Abul?Fadl, S. Maanaki, W.J. Collis and S. Iyer, "Selective Electro?epitaxial Growth of In.53Ga.47As", IEEE SoutheastCon., 52?55 (1987).
E. Shanthi, A. Banerjee and K.L. Chopra, "Undoped and Doped SnO2/Si Junctions for Photovoltaic Applications", Proc. National Solar Energy Convention, Annamalainagar,India (1980), p.382.
E. Shanthi, D.K. Pandya, and K.L. Chopra, "Transparent and Conducting Coatings for Solar Cells"; Presented at the 7th Int. Solar Energy Congr., New Delhi, India (Jan. 1978), Sun: Mankind's Future Source of Energy, Oxford, Pergamon (1978), p. 698 - 702.

Master's Thesis Supervised:

Current Graduate Students

Solomon Mulugeta (Ph.D. Candidate)

Nganamakabane Ella Mokoena (M.S.E.E. Candidate)

Post-doctoral Sponsored

Jie Li

SHANTHI N. IYER PROFESSOR

SHANTHI N. IYER
PROFESSOR